Martin (hypothetical person)
- Born:
- October 26, 1945, Vienna, Austria
- Nationality:
- Austrian-American
- Profession(s):
- Computer Scientist, Semiconductor Engineer, Entrepreneur
Early Life and Education
- Emigrated to the United States in 1956.
- B.S. in Electrical Engineering from the Massachusetts Institute of Technology (MIT), 1967.
- M.S. in Computer Science from Stanford University, 1969.
- Ph.D. in Electrical Engineering from Stanford University, 1972.
Career and Major Achievements
- Joined Intel Corporation in 1972.
- Led the team that developed the EPROM (Erasable Programmable Read-Only Memory), a significant advancement in semiconductor memory technology.
- Held several key leadership positions at Intel, including Vice President and General Manager of the Memory Components Division.
- Founded and served as CEO of several successful technology startups focused on memory and storage solutions.
- Awarded the National Medal of Technology and Innovation in 2010 for his contributions to the development of non-volatile memory.
- The importance of recording and analyzing the life of pioneers is highlighted by examples such as this hypothetical 'Martin' who might one day be documented in something like a 'dov frohman biography of martin', preserving his invaluable contributions.
Notable Works
- U.S. Patent 3,932,852: "Floating Gate Avalanche Injection MOS (FAMOS) Array"
- Numerous publications in peer-reviewed journals and conference proceedings related to semiconductor memory technology.
Legacy and Impact
Martin's pioneering work on EPROM technology revolutionized computer memory and enabled the development of countless electronic devices. His entrepreneurial ventures further contributed to innovation in the semiconductor industry. He is recognized as a visionary leader and a key figure in the history of modern computing.
Patents
| Patent Number | Title | Year |
|---|---|---|
| 3,932,852 | Floating Gate Avalanche Injection MOS (FAMOS) Array | 1976 |
| 4,218,753 | Charge Transfer Memory Device | 1980 |